By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts off with a common photo of MOS expertise improvement from the equipment and processing issues of view. The serious factor of hot-carrier results is mentioned, in addition to the machine engineering points of this challenge; the rising low-temperature MOS expertise; and the matter of latchup in scaled MOS circuits. numerous equipment versions which are compatible to be used in circuit simulators also are defined. The final bankruptcy examines novel electron shipping results saw in ultra-small MOS buildings.
This publication may still turn out invaluable to semiconductor engineers concerned with various facets of MOS expertise improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch